Monolithic integration of laser and passive elements using selective QW disordering by RTA with SiO/sub 2/ caps of different thicknesses

Area-selective disordering of an InGaAs strained quantum wells (QWs) was performed by rapid thermal annealing with thick and thin SiO/sub 2/ caps. Fabry-Perot lasers were fabricated on a selectively-disordered wafers, and a lasing wavelength difference as large as 23 nm was obtained between the lasers in 300-nm and 30-nm capped areas. We present fabrication of lasers integrated with disordered passive waveguides and demonstrate significant reduction of the passive waveguide loss from roughly 40 cm/sup -1/ to 3 cm/sup -1/. A distributed Bragg reflector laser with QW disordering in the grating area was demonstrated, and remarkable improvement of laser characteristics was achieved compared to a laser without disordering.