Coherent, monolithic two-dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission

Two-dimensional coherent strained-layer InGaAs/AlGaAs quantum well laser arrays consisting of 100 (10×10) active elements have been fabricated and characterized. The central lobe of the far field has a full width at half power of 0.04°×1°. Observation of about 2 W peak power from either the substrate or the junction surface, with differential quantum efficiencies from each side of about 40%, is reported. The mode spectrum of the emitted power is contained in a ∼2 Å wavelength interval at ∼2 W.