The enhanced light extraction of the GaN-based light-emitting diode (LED) with a two-dimensional concave hemisphere-shaped indium–tin-oxide (ITO) layer, fabricated using laser holographic lithography and inductively-coupled plasma etching techniques were studied. Compared to the LED with a planar ITO layer, it is found that the light output power of LEDs with concave hemisphere patterned ITO layers is improved by ∼34%. This enhanced light output power is attributed to the increase of light extraction by effective photon escape and self-divergence effect at the concave hemisphere-shaped ITO surface.
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Seo et al. (2010) studied this question.
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