Self-trapping of electrons at the field-effect junction of a molecular crystal

We consider the interface of a molecular crystal with a polar dielectrics. Coulomb interaction of free electrons in the molecular crystal with surface polar phonons of the dielectrics can lead to self-trapping of carriers. For typical parameters of molecular field-effect transistors the binding energy is found to be high enough to allow for the formation of a strongly coupled polaron. The effect is further enhanced in the presence of a bias electric field.