The surface reaction of NO 2 and H 2 O vapor to emit HONO into the gas phase was studied in the evacuable and bakeable photochemical chamber under the irradiation of UV‐visible light (≳ 290 nm). Kinetic analysis of the NO, NO 2 , and HONO with the aid of computer modeling strongly suggested that the formation of HONO by the surface reaction is photoenhanced. When a linear regression was assumed, the photoenhancement factor defined by {( k ′ 21 / k 21 ) − 1} was expressed as (6.8 ± 2.5) k 1 under our experimental conditions, where k 1 is the primary photolysis rate of NO 2 , and k 21 , k ′ 21 are the second‐order‐equivalent rate constants of the HONO formation reaction in dark and under irradiation, respectively. The discussion was made that this photocatalitic enhancement of HONO formation would explain the nature of the extra OH radical flux in the smog chamber experiments, which has been discussed as “unknown radical source” and has still been unexplained by the surface dark reaction of NO 2 and H 2 O to emit HONO.
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Akimoto et al. (1987) studied this question.
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