High-Average Power EUV Light Source for the Next-Generation Lithography by Laser-Produced Plasma

Laser-produced plasma is expected to fulfill the strict requirement as an extreme ultraviolet (EUV) light source for the next-generation lithography with 115-W average power at the intermediate focus, in terms of stability, minimum contamination, and cost of ownership. A liquid xenon micro jet is employed in our experimental facility to confirm the scalability up to the 115-W clean output power. The present experimental device is composed of a 1-kW 10-kHz 6-ns Nd:YAG laser with a xenon jet of up to 50-/spl mu/m diameter of 35 m/s speed inside a vacuum chamber, combined with a xenon recirculation system. The observed EUV power is 4 W at 13.5 nm (2% bandwidth, 2/spl pi/sr) from the plasma source with 0.5% stability (1 /spl sigma/, 50-pulse moving average). Debris mitigation and contamination control is now studied for fast ions by time-of-flight measurements, and confinement and exhaust by a magnetic field is shown to be effective. Xe/sup +/ to Xe/sup 13+/ ions were observed with Xe/sup 2+/ being the main charged state. Experimental study is presented on these subjects and further parametric study on the laser wavelength and pulsewidth is reported, discussing the scalability toward the realization of a 115-W system.