The authors measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low pressure (10−6Torr) analyte environments. They model the CNT film as a RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to changes in the CNT film resistivity alone; the electrostatic gate capacitance of the CNT film does not depend on gate voltage or chemical analyte adsorption. However, the CNT film resistance is enormously sensitive to low pressure analyte exposure.
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