Current–Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A “Bottom-Up” Perspective

By generalizing the classical linear response theory of “stick” percolation to nonlinear regime, we find that the drain–current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formulaID = A/LSξ(LS/LC, ρSLS²) × f(VG, VD), whereAis a technology-specific constant,ξis a function of geometrical factors such as stick lengthLS, channel lengthLC, and stick densityρS, andfis a function of drainVDand gateVGbiasing conditions. This scaling formula implies that the measurement of the full current–voltage characteristics of a “single” NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.