ion of a F atom from incident F₂ by Si(100)- (2×1) is demonstrated by detection of the scattered, complementary F atom. He atom diffraction measurements are consistent with abstraction occurring at dangling bond sites. The low probability for single atom adsorption (P₁0ex0ex=0ex0ex0.10±0.01) relative to the total adsorption probability (Pₜ0ex0ex=0ex0ex0.96±0.02) in the zero coverage limit indicates that the second F atom can also be trapped by the dangling bonds. Both the single and two atom adsorption probabilities decay to zero when the dangling bonds are saturated at 1 ML coverage. Atom abstraction represents a mechanism distinct from the classic one for dissociative chemisorption.
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Li et al. (1995) studied this question.
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