Vector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient Conditions

The spins of point defects in silicon carbide are promising candidates for qubits and sensors under a00exm00exb00exi00exe00exn00ext conditions. Unlike defect-bearing diamond, SiC is regarded as an industry-friendly platform, with an existing market for high-purity SiC wafers and a mature fabrication technology. The authors detect the magnitude and direction of a magnetic field using magnetic resonance with optical readout of the spin-3/2 states of silicon-vacancy defects in SiC, plus optimized pulse sequences for spin manipulation. This yields a solid-state quantum vector magnetometer in a material available for wafer-scale production.