Characterization of strained quantum wells by high-resolution x-ray diffraction

The GaAs/GaInAs/GaAs quantum-well structures grown by metalorganic chemical vapor deposition were studied using high-resolution x-ray diffractometry and photoluminescence techniques. Diffraction profiles were fitted to experimental rocking curves by a simulation procedure, based on the direct summation of scattered waves. The analytical expressions obtained shed light on various relevant parameters and, together with a specific growth procedure, permitted determination of the thickness and composition of strained quantum wells. By following fine interference effects in the x-ray diffraction spectra quantum wells as thin as 1.4 nm could be characterized. In order to check the validity of the procedure, the obtained quantum-well parameters were used to calculate the peak positions in luminescence spectra and good agreement with experimental data was found.