Experimental results that demonstrate trench power MOSFETs with a specific on-state resistance of 0.2 m Omega -cm/sup 2/ and capable of sustaining 55 V across drain-source terminals in the off state are discussed. This performance was achieved by using an improved silicon trench processing technology. The forward conductivity reported is the highest ever obtained for a silicon power device.>
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K. Shenai (1991) studied this question.
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