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The barrier height at the anodic oxide/GaAs interface has been determined by internal photoemission of the metal-oxide-semiconductor structures. The height of the potential barrier between the oxide and GaAs is found to be 2.62±0.05 eV for as-grown and 2.39±0.05 eV for hydrogen-annealed specimens. Quantum yield below the photoemission threshold is interpreted in terms of electron emission from interface states at energies above midgap of GaAs.
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Yokoyama et al. (1981) studied this question.
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