In situ transport in alumina-based magnetic tunnel junctions during high-vacuum annealing

We have performed in situ transport measurements on CoFeB∕AlO∕Co spin-valve magnetic tunnel junctions during annealing up to 200 °C. For optimally oxidized junctions we observe a marked decrease in the parallel state junction resistance, which occurs at around 150 °C and continues throughout the anneal process until the temperature is reduced back below 150 °C. Spectroscopic measurements reveal a stronger bias dependence due to enhanced magnon-assisted tunneling, and show that features relating to weak fcc texture in the cobalt upper electrode fade after annealing at 200 °C. We attribute this to a possible amorphization of the cobalt electrode in close proximity to the barrier interface.