Fourier transform infrared spectroscopy has been applied to the study of polycrystalline silicon samples previously exposed to rf- and dc-induced hydrogen plasmas. The first direct observation of hydrogen incorporated in the grain boundaries has been made. Peaks attributable to surface hydrogen have also been observed. The techniques developed show considerable utility in probing the very small numbers of impurity atoms in grain boundaries.
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Ginley et al. (1981) studied this question.
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