Parameter optimization of a silicon pressure-sensitive element based on dual-drain MIS transistors

The object of investigation was an integrated pressure transducer with a differential pressure-sensitive element based on two parallel-connected p -channel dual-drain MIS transistors. The transistors were made on the planar side of a silicon membrane with the rigid central region near the edges of membrane’s thin part (valley). The optimum design of the transducer and its basic characteristics were determined.