Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6×1014cm−2. Using the output at 197nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318nm, was measured with excitation at 263nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10–300K and decay transients were of the order of nanoseconds.
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Zavada et al. (2006) studied this question.
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