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We established that the contact resistance to the two-dimensional electron gas (2DEG) in selectively doped n-AlGaAs/GaAs heterostructure is crystal orientation dependent. The contact resistance in the [011] direction is the lowest and that in the [01̄1] direction is the highest. The contact resistance monotonically changes between the [011] and [01̄1] directions. We also find the sheet resistance dependence of the contact resistance.
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Kamada et al. (1986) studied this question.
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