A theoretical analysis of the normally-off GaAs MESFET is presented, including the effects of a free-surface depletion layer between source and gate as well as between gate and drain. The calculated current-voltage characteristics are in satisfactory agreement with experimental results. The effects of recess depth, fluctuations in the thickness of the active layer and other device parameters are assessed quantitatively.
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T. Hariu (1982) studied this question.
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