Some metal–organic frameworks (MOFs) with low dielectric constants, high thermal/mechanical stabilities, low leakage currents, and good comparability in devices can lead to integrated circuits, in which the MOF can act as an interlayer dielectric (ILD) material with tunable structural properties and high porosity. Based on initial research, in this Highlight, we propose a roadmap that can serve as a starting point for addressing the potential use of MOFs as ILD materials in the microelectronics industry, providing an effective path towards achieving remarkable new applications of dielectric MOFs in the future.
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Usman et al. (2015) studied this question.
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