Lanthanum‐doped lead titanate thin films have been prepared by sol–gel processing. These studies reveal the structural and electrical properties of 18 mol% La‐doped PbTiO 3 thin films to be dependent on the annealing conditions. With appropriate annealing conditions, a relative dielectric constant of about 900 was obtained, comparable to the bulk composition.
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Shimizu et al. (1991) studied this question.
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