A power GaAs MESFET with a high drain-source breakdown voltage in excess of 17 V has been developed. A selective GaAs epitaxial process is introduced to form "inlaid" n+ source and drain regions that can provide a high drain-source breakdown voltage and a low ohmic-contact resistance. Typical characteristics of the MESFET composed of two-cell units are as follows:
No takes yet. Share an insight, caveat, or question.
Fukuta et al. (1976) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: