We present x-ray absorption measurements on silicon clusters and silicon plasmas produced by pulsed laser irradiation of bulk silicon. The results are compared with earlier time-resolved x-ray absorption measurements on amorphous silicon foils under pulsed laser irradiation. Clusters are formed at an irradiance as low as 3.0 J/cm2. At an irradiance of 14 J/cm2 ionized species up to Si4+ are formed. We find a removed Si layer thickness of 80 Å at an irradiance of ≊6 J/cm2, at 15 ns pulse duration.
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Brug et al. (1986) studied this question.
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