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Experimental study reveals electrical activity linked to boundary structure in polycrystalline silicon, highlighting how crystal defects impact semiconductor performance.
The structural and electrical properties of twins in polycrystalline silicon materials have been investigated by electron-beam-induced current and transmission electron microscopy. The electrical activity of the first- and second-order twins is related to segregation effects and to their structure, as described by geometrical models.
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Bary et al. (1988) studied this question.
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