Boron nanowires for flexible electronics

Flexible boron nanowires have been synthesized via thermoreduction in boron-oxygen compounds with magnesium. These as-prepared nanowires, which are structurally uniform and single crystalline, represent good semiconductor at high temperature. Tensile stress measurements demonstrate excellent mechanical property of boron nanowires as well as resistance to mechanical fracture even under a strain of 3%. Importantly, simultaneous electrical measurement reveals that the corresponding electrical conductance is very robust and remains constant under mechanical strain. Our results can be briefly explained by Mott’s variable range hopping model.