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The hysteresis (extrinsic) and current-voltage (I-V) characteristics of the multiwell, vertically integrated, resonant-tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I-V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.
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Kuo et al. (1990) studied this question.
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