The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the non-window 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised.
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Shima et al. (1994) studied this question.
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