Optical determination of the heavy-hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well

We have measured the diamagnetic shift of band-edge luminescence, no-phonon peak, and phonon sideband from a pseudomorphic, undoped Si0.83Ge0.17/Si quantum well using high-field magnetoluminescence spectroscopy. The quadratic dependence of the diamagnetic shift of the no-phonon luminescence peak suggests that the luminescence originates from excitons. Using a variational calculation, we determine the effective heavy-hole mass and the exciton binding energy to be 0.27m0 and 14.8 meV, respectively, and compare these results with reported values obtained from other measurement techniques.