Realization of crescent-shaped SiGe quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy

SiGe/Si quantum wire structures were successfully fabricated on a V-groove patterned Si substrate by using gas-source Si molecular beam epitaxy (GS-SiMBE). A cross sectional image of transmission electron microscope clarified a crescent-shaped SiGe layer at the bottom of the V-groove owing to anisotropy of the growth rate on the different crystal orientations in GS-SiMBE.