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Si1−xGex/Si disordered superlattices (d-SLs) are fabricated by solid source molecular beam epitaxy. Photoluminescence properties of Si1−xGex/Si d-SL are studied at low temperature by comparing with a conventional ordered superlattice (o-SL) where the macroscopic chemical composition is same as that of the d-SL. Strong intensity of the PL peak compared with the o-SL is observed in the d-SL. Carrier confinement rather than localization effects by artificially introduced disordering enhances the luminescence process in SiGe strained layers.
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Wakahara et al. (1994) studied this question.
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