Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers

Both Hall and drift in-plane mobilities have been measured in compressively strained p-type Si/sub 1-x/Ge/sub x/ layers grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Measurements were taken over the boron doping range of 10/sup 18/ cm/sup -3/ to 10/sup 20/ cm/sup -3/ with Ge contents of 0/spl les/x/spl les/0.22. The apparent drift mobility is found to increase with increasing Ge content, whereas the Hall mobility decreases for the same samples at all doping levels studied. The Hall factor decreases with increasing Ge content, which may be due to additional scattering mechanisms introduced by Ge along with changes in the valence band structure as a result of strain. In this study we also provide the first report of Hall mobility measurements of deuterium-passivated, heavily doped Si.>