August 1, 1983Applied Physics LettersOpen Access

Carrier leakage and temperature dependence of InGaAsP lasers

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Abstract

A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.

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Cite This Study

Chen et al. (1983) studied this question.

synapsesocial.com/papers/6a83ef49ac97fff8746aa4c4 https://doi.org/10.1063/1.94305

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Abstract

A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.