The magnetoresistance of intrinsic semiconductors is calculated theoretically in the quantum limit where only the lowest Landau level is thermally populated. The variation of the intrinsic carrier concentration with magnetic field is taken into account. We find that in this limit the magnetoresistance increases exponentially with magnetic field due to the field-induced freeze-out of the intrinsic carriers. This arises because of the increase in the effective band gap of the semiconductor with magnetic field.
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Arora et al. (1982) studied this question.
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