We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to a fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and readout of the state is done by the means of the tunneling anisotropic magnetoresistance effect. This 1 bit demonstrator device can be used to design an electrically programmable memory and logic device.
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Mark et al. (2011) studied this question.
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