A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing

A new GaAs memory cell consists of a monolithic element in which a P-i-N-i-P epitaxial structure stores charge and a buried p-channel FET senses charge. Measured storage times up to 40 s were observed at 300 K with minimal effects on charge decay for applied drain voltages of V/sub DS/=+or-1.5 V. Electrical write and erase techniques are demonstrated and discussed.>