An integrated electro-optic lens/scanner device was fabricated on ferroelectric LiTaO3 wafer. This was done using lithographically defined domain-inverted regions extending through the crystal thickness. A lens power of 0.233 cm−1kV−1 and a scanner deflection of 12.68 mrad−1 kV−1 was observed. We also demonstrate an electro-optic lens stack collimator which collimates an input beam focused to 5μm waist diameter at 2.3kV.
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Gopalan et al. (1999) studied this question.
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