Potential application of a projection system with reduction optics to the patterned doping process has been demonstrated. A KrF excimer laser beam is projected on GaAs substrates enclosed in a SiH4 gas ambient cell to achieve the Si doping with a field size of 5×5 mm2. At a laser fluence of 380 mJ/cm2, the n-type conduction layer with a surface carrier density of 2.27×1014 cm−2 in the semi-insulating GaAs substrate and with an activation efficiency of ∼81% can be obtained. The minimum linewidth of 2.5 μm is discussed together with temperature profiles calculated by transient heat conduction in the substrate.
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Sugioka et al. (1988) studied this question.