Aluminum alloy etching is an important process in ultra-large-scale integration (ULSI) fabrication. We investigated the effect of N 2 addition to Cl 2 +BCl 3 gas mixture on aluminum-copper alloy etching by electron cyclotron resonance reactive ion etching (ECR-RIE) and magnetically enhanced reactive ion etching (MERIE). In ECR-RIE, N 2 addition was effective in suppressing residues and post-etch corrosion of aluminum alloy interconnects; on the other hand, in MERIE, N 2 addition promoted the formation of residues and post-etch corrosion. This difference is probably caused by BCl X + in plasma, because it was found by mass spectral analysis that N 2 addition increased the amount of BCl X + in plasma of ECR-RIE, but it decreased that in plasma of MERIE.
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Kusumi et al. (1995) studied this question.
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