We describe a process for high-resolution pattern definition in tungsten films. The high etch ratio of tungsten to a Au/Pd durable mask in an SF6/O2 plasma permits the use of a high-resolution, thin resist, electron beam lithographic process. 200-nm lines have been etched with vertical walls in 1000-nm tungsten films.
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Randall et al. (1981) studied this question.
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