Experimental data concerning the dependence of plasma etching rates on the flow rate of the etching gas have been analyzed in terms of the consumption of the gas, and a simple model is proposed to explain the observed dependence. The decrease in etch rates at low flow rates is shown to be due to an inadequate supply of the etching gas; at high flow rates, etching is retarded because active species are pumped away.
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Chapman et al. (1978) studied this question.