Radiation Effects in Diamond Lattice Semiconductors

Developments in the study of diamond-lattice semiconductors are reviewed and basic results that may contribute to the development or choice of devices for use in radiation environments are pointed out. Special attention is given to radiation effects in germanium and silicon. It was concluded that the annealing stages in high-purity n-type germanium can be understood on the basis of defectimpurity interactions of a nature similar to those known to occur in silicon. The formation of D-V and D-V/sub 2/ complexes can be inferred from the behavior of the various annealing stages. (P.C.H.)