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Schottky barrier diodes were fabricated on n -type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi 2 . Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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Akira Kikuchi (1986) studied this question.
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