The classical approach of thermal desorption is modified in order to explain the resistance variation of a semiconducting thin film subjected to a linear temperature scanning after a “strong” chemisorption. A simplified model is set up for a monoenergetical desorption. This theoretical approach is borne out by the experimental results relating to the thermal desorption of O2 and CO, chemisorbed upon CdSe thin films: desorption peaks are exhibited by d/d(1/T) lg R/R0 versus 1/T curves (R resistance in presence of chemisorbed gas, R0 resistance without chemisorbed gas, T thermodynamic temperature) getting the energetical spectrum of desorption of a given gas strongly chemisorbed on a given material.
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Colin et al. (1981) studied this question.
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