ZnSe / CdSe heterostructure thin film electrodes were produced by ternary elemental vacuum evaporation. These electrodes behaved similarly to MIS type devices when tested photoelectrochemically. Auger depth profiling indicated the formation of an electrochemically generated ZnS interface layer that provided an enhanced V OC compared to CdSe alone. Efficiencies as high as 5.4% under simulated AM2 conditions were recorded for these electrodes.
No takes yet. Share an insight, caveat, or question.
Russak et al. (1982) studied this question.