The Hall effect in integrated magnetotransistors

Computations using a two-dimensional numerical model as well as experimental data obtained from Hall probe measurements indicate the presence of a weak Hall field along the emitter-base junction of magnetotransistors. This field is too minute to cause any appreciable emitter-injection modulation or asymmetric injection, an effect that has been widely invoked to describe the magnetic sensitivity of magnetotransistors (MT) fabricated in standard IC technologies. The results indicate that emitter-injection modulation as an MT operating principle can be ruled out in favor of carrier deflection (for linear MTs) and magnetoconcentration (for nonlinear MTs).>