This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current3×105s at 150 °C, and ac endurance of up to 105Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (2014) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: