Experimental results on planar-type amorphous-silicon MOS transistors with submicrometer-length channels are described. The minimum channel length fabricated by using exposure technology was about 0.4 mu m. The 0.55- mu m-long device had an on-off current ratio of more than 10/sup 5/ at V/sub D/=2 V.>
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Uchida et al. (1989) studied this question.
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