Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length

In this letter, we report a flexible Indium-Gallium-Zinc-Oxide quasi-vertical thin-film transistor (QVTFT) with 300-nm channel length, fabricated on a free-standing polyimide foil, using a low-temperature process4, a threshold voltage of 1.5 V, a maximum transconductance of 0.73 μS μm-1, and a total gate capacitance of 76 nF μm-1. From S-parameter measurements, we extracted a transit frequency of 1.5 MHz. Furthermore, the flexible QVTFT is fully operational when bent to a tensile radius of 5 mm.