Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, hydrogen azide (HN 3 ). Silicon nitride film deposited at 425°C was nitrogen-rich and showed hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 10 15 Ω·cm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.
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Ishihara et al. (1992) studied this question.
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