a-Si:H films were deposited by direct photochemical vapor deposition using vacuum ultraviolet lights emitted from deuterium (161 nm) and Xe (147 nm) discharge lamps. A source gas of Si2H6 was effectively decomposed, and a high deposition rate of 7.5 nm/min could be achieved in the case of the Xe lamp. The films had excellent electrical and photoelectric properties similar to ordinary films deposited by glow discharge, and showed very little degradation of photoconductivity under illumination.
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Fuyuki et al. (1988) studied this question.
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